Host: University of Bologna, Bologna, Italy
Co-supervisor/mentors: V. Cirimele (UniBo, IT), A. Babaki & R. Maheshwari (SDU, DK), N.C. Sebastian (RFI, IT)
Required profile: Electrical Engineering, Physics or equivalent
Desirable skills/interests: Simulation engineering and modelling; Electrical and electronic engineering; Embedded systems; Control engineering; Mathematical physics
Objectives: Design of GaN-HEMT-based circuits acting as power sources and power rectifiers up to the MHz range. The DC will extract accurate empirical models of the nonlinear FET-like devices in the III quadrant of the DC characteristics for nonlinear operation with negative drain-source voltages. Design guidelines for bidirectional WPT systems will be designed, adopting analytical and numerical tools in the MHz range. Realization and experimental validation of the most promising topologies in the MHz range and assessment of the main performance indexes (such as the conversion efficiency in both operating regimes) will be performed.
Project: Nonlinear design and optimization of bidirectional circuits capable of operating both as power oscillators and as rectifiers (WP2)
